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Gate and Power Drivers 2EDS8165H
Infineon
2EDS8165H
--
Power Management
Gate and Power Drivers
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | MOSFET |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 16 |
| Automotive | No |
| Bridge Type | Half Bridge |
| Driver Type | High and Low Side |
| PCB changed | 16 |
| Part Status | Unconfirmed |
| Package Width | 7.5 |
| Latch-Up Proof | No |
| Package Height | 2.35 |
| Package Length | 10.3 |
| Special Features | Under Voltage Lockout |
| Supplier Package | DSO |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Driver Configuration | Non-Inverting |
| Maximum Fall Time (ns) | 8 |
| Maximum Rise Time (ns) | 12 |
| Output Resistance (Ohm) | 1.2|3.1 |
| Peak Output Current (A) | 4(Typ) |
| Input Logic Compatibility | CMOS|TTL |
| High and Low Sides Dependency | Independent |
| Maximum Operating Frequency (kHz) | 10000 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Propagation Delay Time (ns) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 3.5 |
| Minimum Operating Supply Voltage (V) | 3 |
| Typical Input Low Threshold Voltage (V) | 1.2 |
| Typical Input High Threshold Voltage (V) | 2 |
| Description |
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