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Gate and Power Drivers MCP14E10-E/P
Microchip Technology
MCP14E10-E/P
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Power Management
Gate and Power Drivers
Specification
| Product Attribute | Attribute Value |
| HTS | 8542.39.00.01 |
| PPAP | Yes |
| Type | IGBT|MOSFET |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Driver Type | Low Side |
| PCB changed | 8 |
| Part Status | Active |
| Package Width | 6.35 |
| Package Height | 3.3 |
| Package Length | 9.27 |
| Supplier Package | PDIP |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Driver Configuration | Non-Inverting |
| Standard Package Name | DIP |
| Maximum Fall Time (ns) | 30 |
| Maximum Rise Time (ns) | 30 |
| Output Resistance (Ohm) | 4 |
| Peak Output Current (A) | 3(Typ) |
| Input Logic Compatibility | CMOS|TTL|3V to 18V |
| Supplier Temperature Grade | Extended |
| Maximum Supply Current (mA) | 1.8 |
| Maximum Power Dissipation (mW) | 1120 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Propagation Delay Time (ns) | 65 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 18 |
| Minimum Operating Supply Voltage (V) | 4.5 |
| Typical Input Low Threshold Voltage (V) | 1.3 |
| Typical Input High Threshold Voltage (V) | 1.5 |
| Description |
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