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Gate and Power Drivers NCD5705BDR2G
onsemi
NCD5705BDR2G
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Power Management
Gate and Power Drivers
Specification
| Product Attribute | Attribute Value |
| HTS | 8542330001 |
| PPAP | Unknown |
| Type | IGBT |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Automotive | Unknown |
| Bridge Type | Half Bridge |
| Driver Type | High Side|Low Side |
| Latch-Up Proof | No |
| Special Features | Under Voltage Lockout |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Driver Configuration | Inverting |
| Reference Voltage (V) | 5(Typ) |
| Maximum Fall Time (ns) | 7.9(Typ) |
| Maximum Rise Time (ns) | 9.2(Typ) |
| Peak Output Current (A) | 7.8(Typ) |
| Maximum Supply Current (mA) | 0.9(Typ) |
| High and Low Sides Dependency | Synchronous |
| Maximum Power Dissipation (mW) | 700 |
| Maximum Turn-On Delay Time (ns) | 54(Typ) |
| Maximum Turn-Off Delay Time (ns) | 59(Typ) |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Propagation Delay Time (ns) | 15 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 20 |
| Minimum Operating Supply Voltage (V) | 0.7 |
| Typical Input Low Threshold Voltage (V) | 4.3(Min) |
| Description |
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