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Gate and Power Drivers NCV57256DR2G
onsemi
NCV57256DR2G
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Power Management
Gate and Power Drivers
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| Type | IGBT|MOSFET |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Automotive | Yes |
| Bridge Type | Half Bridge |
| Driver Type | High and Low Side |
| Part Status | Obsolete |
| Latch-Up Proof | No |
| Special Features | Under Voltage Lockout |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Driver Configuration | Non-Inverting |
| Maximum Fall Time (ns) | 10(Typ) |
| Maximum Rise Time (ns) | 12(Typ) |
| Peak Output Current (A) | 3.5(Typ) |
| Input Logic Compatibility | 3.3V|5V|15V |
| Supplier Temperature Grade | Automotive |
| Maximum Supply Current (mA) | 6 |
| High and Low Sides Dependency | Synchronous |
| Maximum Power Dissipation (mW) | 1400 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Propagation Delay Time (ns) | 60(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 20 |
| Minimum Operating Supply Voltage (V) | 2.4 |
| Typical Input Low Threshold Voltage (V) | 6(Max) |
| Typical Input High Threshold Voltage (V) | 1.68(Min) |
| Description |
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