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Gate and Power Drivers UCC23313BQDWYQ1
Texas Instruments
UCC23313BQDWYQ1
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Power Management
Gate and Power Drivers
Specification
| Product Attribute | Attribute Value |
| HTS | 8542330001 |
| PPAP | Yes |
| Type | SiCFET|IGBT|MOSFET |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 6 |
| Automotive | Yes |
| Driver Type | Isolated Gate Driver|High Side|Low Side |
| PCB changed | 6 |
| Part Status | Active |
| Package Width | 7.6(Max) |
| Latch-Up Proof | No |
| Package Height | 3.18 |
| Package Length | 4.78(Max) |
| Special Features | Under Voltage Lockout |
| Supplier Package | SOIC |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Maximum Fall Time (ns) | 25 |
| Maximum Rise Time (ns) | 28 |
| Peak Output Current (A) | 5.3(Typ) |
| Supplier Temperature Grade | Automotive |
| Maximum Supply Current (mA) | 50 |
| High and Low Sides Dependency | Synchronous |
| Maximum Power Dissipation (mW) | 750 |
| Maximum Turn-On Delay Time (ns) | 25 |
| Maximum Turn-Off Delay Time (ns) | 25 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Propagation Delay Time (ns) | 70(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Description |
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