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IGBT Chip AFGHL25T120RHD
onsemi
AFGHL25T120RHD
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveYes
Part StatusLTB
Channel TypeN
ConfigurationSingle
Supplier Temperature GradeAutomotive
Maximum Power Dissipation (mW)261000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)48
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.84
Description
Trans IGBT Chip N-CH 1200V 48A 261000mW Automotive
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