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AFGHL75T65SQDT
AFGHL75T65SQDT
IGBT Chip AFGHL75T65SQDT
onsemi
AFGHL75T65SQDT
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width4.7
Package Height20.57
Package Length15.62
Supplier PackageTO-247
SVHC Exceeds ThresholdYes
Supplier Temperature GradeAutomotive
Maximum Power Dissipation (mW)375000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 650V 80A 375000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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