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AFGY120T65SPD
AFGY120T65SPD
IGBT Chip AFGY120T65SPD
onsemi
AFGY120T65SPD
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveYes
TechnologyField Stop|Trench
Part StatusActive
Channel TypeN
ConfigurationSingle
Supplier Temperature GradeAutomotive
Maximum Power Dissipation (mW)714000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)160
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 650V 160A 714000mW Tube
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