Welcome to BEAM! Tel: +86-553-5896615
Language: Help
AFGY120T65SPD
AFGY120T65SPD
IGBT Chip AFGY120T65SPD
onsemi
AFGY120T65SPD
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveYes
TechnologyField Stop|Trench
Part StatusActive
Channel TypeN
ConfigurationSingle
Supplier Temperature GradeAutomotive
Maximum Power Dissipation (mW)714000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)160
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 650V 160A 714000mW Tube
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95479
Manufacturer: Microchip Technology
Inventory: 0
$0.69311
Manufacturer: Microchip Technology
Inventory: 4000
$2.4485
Manufacturer: STMicroelectronics
Inventory: 5880
$0.6722
Manufacturer: Texas Instruments
Inventory: 3000
$3.35661
Manufacturer: Texas Instruments
Inventory: 2500
$0.14385
Manufacturer: Texas Instruments
Inventory: 3000
$1.31549
Manufacturer: Texas Instruments
Inventory: 6000
$1.06088
Manufacturer: STMicroelectronics
Inventory: 1920
$3.50089
Manufacturer: ADI
Inventory: 0
$1.39906