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APT100GN60B2G
APT100GN60B2G
IGBT Chip APT100GN60B2G
Microchip Technology
APT100GN60B2G
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height21.46(Max)
Package Length16.26(Max)
Supplier PackageT-MAX
Maximum Power Dissipation (mW)625
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)229
Maximum Gate Emitter Leakage Current (uA)0.6
Description
Trans IGBT Chip N-CH 600V 229A 625mW 3-Pin(3+Tab) T-MAX Tube
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