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APT25GP90BDQ1G
APT25GP90BDQ1G
IGBT Chip APT25GP90BDQ1G
Microchip Technology
APT25GP90BDQ1G
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height21.46(Max)
Package Length16.26(Max)
Supplier PackageTO-247
Standard Package NameTO
Maximum Power Dissipation (mW)417
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)900
Maximum Continuous Collector Current (A)72
Maximum Gate Emitter Leakage Current (uA)0.1
Description
Trans IGBT Chip N-CH 900V 72A 417mW 3-Pin(3+Tab) TO-247 Tube
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