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APT25GR120S
APT25GR120S
IGBT Chip APT25GR120S
Microchip Technology
APT25GR120S
--
Diodes, Transistors and Thyristors
IGBT Chip
APT25GR120S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width13.99(Max)
Package Height5.08(Max)
Package Length16.05(Max)
Supplier PackageD3PAK
Standard Package NameTO-268
Maximum Power Dissipation (mW)521
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)75
Maximum Gate Emitter Leakage Current (uA)0.25
Description
Trans IGBT Chip N-CH 1200V 75A 521mW 3-Pin(2+Tab) D3PAK Tube
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