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APT30GT60BRDLG
APT30GT60BRDLG
IGBT Chip APT30GT60BRDLG
Microchip Technology
APT30GT60BRDLG
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height21.46(Max)
Package Length16.26(Max)
Supplier PackageTO-247
Standard Package NameTO
Maximum Power Dissipation (mW)250
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)64
Maximum Gate Emitter Leakage Current (uA)0.1
Description
Trans IGBT Chip N-CH 600V 64A 250mW 3-Pin(3+Tab) TO-247
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