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APT45GP120B2DQ2G
APT45GP120B2DQ2G
IGBT Chip APT45GP120B2DQ2G
Microchip Technology
APT45GP120B2DQ2G
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height21.46(Max)
Package Length16.26(Max)
Supplier PackageT-MAX
Maximum Power Dissipation (mW)625
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)113
Maximum Gate Emitter Leakage Current (uA)0.1
Description
Trans IGBT Chip N-CH 1200V 113A 625mW 3-Pin(3+Tab) T-MAX Tube
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