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APT75GN60LDQ3G
APT75GN60LDQ3G
IGBT Chip APT75GN60LDQ3G
Microchip Technology
APT75GN60LDQ3G
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5.21(Max)
Package Height26.49(Max)
Package Length20.5(Max)
Supplier PackageTO-264
Maximum Power Dissipation (mW)536
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)155
Maximum Gate Emitter Leakage Current (uA)0.6
Description
Trans IGBT Chip N-CH 600V 155A 536mW 3-Pin(3+Tab) TO-264 Tube
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