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AUIRGDC0250
AUIRGDC0250
IGBT Chip AUIRGDC0250
Infineon
AUIRGDC0250
--
Diodes, Transistors and Thyristors
IGBT Chip
AUIRGDC0250.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
PCB changed3
Part StatusNRND
Channel TypeN
ConfigurationSingle Dual Collector
Package Width5(Max)
Package Height15(Max)
Package Length11(Max)
Supplier PackageTO-220
Maximum Power Dissipation (mW)543000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)141
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.47
Description
Trans IGBT Chip N-CH 1200V 141A 543000mW Automotive 3-Pin(3+Tab) TO-220 Tube
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