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BIDD05N60T
BIDD05N60T
IGBT Chip BIDD05N60T
Bourns
BIDD05N60T
--
Diodes, Transistors and Thyristors
IGBT Chip
BIDD05N60T.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
TechnologyField Stop|Trench
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)82
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)10
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.5
Description
Trans IGBT Chip N-CH 600V 10A 82mW T/R
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