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BUP314D
BUP314D
IGBT Chip BUP314D
Infineon
BUP314D
--
Diodes, Transistors and Thyristors
IGBT Chip
BUP314D.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.9
Package Height12.5
Package Length15
Supplier PackageTO-218
Standard Package NameTO-218
Maximum Power Dissipation (mW)300000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)42
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Chip N-CH 1200V 42A 300000mW 3-Pin(3+Tab) TO-218
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