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DGTD65T15H2TF
DGTD65T15H2TF
IGBT Chip DGTD65T15H2TF
Diodes Incorporated
DGTD65T15H2TF
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width4.8(Max)
Package Height16.4(Max)
Package Length10.4(Max)
Supplier PackageITO-220AB
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)48000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)30
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.65
Description
Trans IGBT Chip N-CH 650V 30A 48000mW 3-Pin(3+Tab) ITO-220AB Tube
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