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FGA180N33ATDTU
FGA180N33ATDTU
IGBT Chip FGA180N33ATDTU
onsemi
FGA180N33ATDTU
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
TechnologyTrench
PCB changed3
Part StatusLTB
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Supplier PackageTO-3PN
Standard Package NameTO-3P
Maximum Power Dissipation (mW)390000
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)330
Maximum Continuous Collector Current (A)180
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.68
Description
Trans IGBT Chip N-CH 330V 180A 390000mW 3-Pin(3+Tab) TO-3PN
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