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FGA25N120FTD
FGA25N120FTD
IGBT Chip FGA25N120FTD
onsemi
FGA25N120FTD
--
Diodes, Transistors and Thyristors
IGBT Chip
FGA25N120FTD.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Supplier PackageTO-3PN
Standard Package NameTO-3P
Maximum Power Dissipation (mW)313000
Maximum Gate Emitter Voltage (V)±25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail
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