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FGA40N60UFDTU
FGA40N60UFDTU
IGBT Chip FGA40N60UFDTU
onsemi
FGA40N60UFDTU
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Supplier PackageTO-3PN
Standard Package NameTO-3P
Maximum Power Dissipation (mW)160000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)40
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)3.1
Description
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-3PN Rail
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