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FGA50S110P
FGA50S110P
IGBT Chip FGA50S110P
onsemi
FGA50S110P
--
Diodes, Transistors and Thyristors
IGBT Chip
FGA50S110P.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Supplier PackageTO-3P
Standard Package NameTO-3P
Maximum Power Dissipation (mW)300000
Maximum Gate Emitter Voltage (V)±25
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1100
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.5
Typical Collector Emitter Saturation Voltage (V)2.06
Description
Trans IGBT Chip N-CH 1100V 50A 300000mW 3-Pin(3+Tab) TO-3P Tube
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