Welcome to BEAM! Tel: +86-553-5896615
Language: Help
FGH4L50T65SQD
FGH4L50T65SQD
IGBT Chip FGH4L50T65SQD
onsemi
FGH4L50T65SQD
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
PackagingTube
AutomotiveNo
TechnologyField Stop|Trench
Part StatusObsolete
Channel TypeN
ConfigurationSingle Dual Emitter
Maximum Power Dissipation (mW)268000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 650V 80A 268000mW Tube
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13761
Manufacturer: Microchip Technology
Inventory: 0
$0.69266
Manufacturer: Microchip Technology
Inventory: 0
$0.21887
Manufacturer: STMicroelectronics
Inventory: 0
$0.43396
Manufacturer: Texas Instruments
Inventory: 3000
$3.35447
Manufacturer: Texas Instruments
Inventory: 0
$0.02544
Manufacturer: Texas Instruments
Inventory: 3000
$1.31465
Manufacturer: Texas Instruments
Inventory: 6000
$1.0602
Manufacturer: STMicroelectronics
Inventory: 1920
$3.49866
Manufacturer: ADI
Inventory: 0
$1.39817