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FGH75T65SHDTLN4
FGH75T65SHDTLN4
IGBT Chip FGH75T65SHDTLN4
onsemi
FGH75T65SHDTLN4
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveNo
TechnologyField Stop|Trench
PCB changed4
Part StatusObsolete
Channel TypeN
ConfigurationSingle Dual Emitter
Package Width5
Package Height22.54
Package Length15.6
Supplier PackageTO-247
Maximum Power Dissipation (mW)455000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)150
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 650V 150A 455000mW 4-Pin(4+Tab) TO-247 Tube
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