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FGL60N100BNTD
FGL60N100BNTD
IGBT Chip FGL60N100BNTD
onsemi
FGL60N100BNTD
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5
Package Height26
Package Length20
Supplier PackageTO-264
Maximum Power Dissipation (mW)180000
Maximum Gate Emitter Voltage (V)±25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1000
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.5
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
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