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FGY40T120SMD
FGY40T120SMD
IGBT Chip FGY40T120SMD
onsemi
FGY40T120SMD
--
Diodes, Transistors and Thyristors
IGBT Chip
FGY40T120SMD.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
TechnologyField Stop|Trench
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width4.82(Max)
Package Height20.82(Max)
Package Length15.87(Max)
Supplier PackagePower TO-247
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)882000
Maximum Gate Emitter Voltage (V)±25
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.8
Description
Trans IGBT Chip N-CH 1200V 80A 882000mW 3-Pin(3+Tab) Power TO-247 Tube
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