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HGT1S14N36G3VLT
HGT1S14N36G3VLT
IGBT Chip HGT1S14N36G3VLT
onsemi
HGT1S14N36G3VLT
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)100000
Maximum Gate Emitter Voltage (V)±10
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)330
Maximum Continuous Collector Current (A)18
Maximum Gate Emitter Leakage Current (uA)1000
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 330V 18A 100000mW 3-Pin(2+Tab) D2PAK T/R
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