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HGTP3N60A4D
HGTP3N60A4D
IGBT Chip HGTP3N60A4D
onsemi
HGTP3N60A4D
--
Diodes, Transistors and Thyristors
IGBT Chip
HGTP3N60A4D.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Supplier PackageTO-220AB
Standard Package NameTO-220
Maximum Power Dissipation (mW)70000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)17
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Chip N-CH 600V 17A 70000mW 3-Pin(3+Tab) TO-220AB Rail
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