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IGC11T120T6LX1SA3
IGC11T120T6LX1SA3
IGBT Chip IGC11T120T6LX1SA3
Infineon
IGC11T120T6LX1SA3
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width3.19
Package Length3.48
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Gate Emitter Leakage Current (uA)0.12
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Chip N-CH 1200V 3-Pin Die Wafer
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