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IGD06N60TXT
IGD06N60TXT
IGBT Chip IGD06N60TXT
Infineon
IGD06N60TXT
--
Diodes, Transistors and Thyristors
IGBT Chip
IGD06N60TXT.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Supplier PackageDPAK
Standard Package NameTO-252
Maximum Power Dissipation (mW)88000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)12
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.5
Description
Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(2+Tab) DPAK
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