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IGW30N60H3
IGW30N60H3
IGBT Chip IGW30N60H3
Infineon
IGW30N60H3
--
Diodes, Transistors and Thyristors
IGBT Chip
IGW30N60H3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width5.21(Max)
Package Height21.1(Max)
Package Length16.13(Max)
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)187000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube
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