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IHW40N60R
IHW40N60R
IGBT Chip IHW40N60R
Infineon
IHW40N60R
--
Diodes, Transistors and Thyristors
IGBT Chip
IHW40N60R.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveUnknown
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel TypeN
ConfigurationSingle
Package Width5.3
Package Height20.95
Package Length15.9
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)305000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.65
Description
Trans IGBT Chip N-CH 600V 80A 305000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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