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IHW40N65R5
IHW40N65R5
IGBT Chip IHW40N65R5
Infineon
IHW40N65R5
--
Diodes, Transistors and Thyristors
IGBT Chip
IHW40N65R5.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
TechnologyTrench Stop
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5.03
Package Height20.95
Package Length15.9
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)230000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.35
Description
Trans IGBT Chip N-CH 650V 80A 230000mW 3-Pin(3+Tab) TO-247 Tube
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