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IKA15N65ET6
IKA15N65ET6
IGBT Chip IKA15N65ET6
Infineon
IKA15N65ET6
--
Diodes, Transistors and Thyristors
IGBT Chip
IKA15N65ET6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width4.85(Max)
Package Height16.15(Max)
Package Length10.65(Max)
Supplier PackageTO-220FP
Maximum Power Dissipation (mW)45000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)17
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.5
Description
Trans IGBT Chip N-CH 650V 17A 45000mW 3-Pin(3+Tab) TO-220FP Tube
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