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IKB40N65ES5ATMA1
IKB40N65ES5ATMA1
IGBT Chip IKB40N65ES5ATMA1
Infineon
IKB40N65ES5ATMA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
TechnologyTrench Stop 5
PCB changed2
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Supplier PackageD2PAK
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)230
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)79
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.35
Description
Trans IGBT Chip N-CH 650V 79A 230mW 3-Pin(2+Tab) D2PAK T/R
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