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IKD04N60RATMA1
IKD04N60RATMA1
IGBT Chip IKD04N60RATMA1
Infineon
IKD04N60RATMA1
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveUnknown
Lead ShapeGull-wing
TechnologyTrench Stop
PCB changed2
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.41(Max)
Package Length6.73(Max)
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)75000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)8
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.65
Description
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3-Pin(2+Tab) DPAK T/R
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