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IKFW40N60DH3E
IKFW40N60DH3E
IGBT Chip IKFW40N60DH3E
Infineon
IKFW40N60DH3E
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)111000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)34
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)2.3
Description
Trans IGBT Chip N-CH 600V 34A 111000mW Tube
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