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IKFW50N60DH3EXKSA1
IKFW50N60DH3EXKSA1
IGBT Chip IKFW50N60DH3EXKSA1
Infineon
IKFW50N60DH3EXKSA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5.18(Max)
Package Height22.4(Max)
Package Length15.9(Max)
Supplier PackageTO-247
Maximum Power Dissipation (mW)130000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)40
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)2.2
Description
Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(3+Tab) TO-247 Tube
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