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IKQ50N120CT2
IKQ50N120CT2
IGBT Chip IKQ50N120CT2
Infineon
IKQ50N120CT2
--
Diodes, Transistors and Thyristors
IGBT Chip
IKQ50N120CT2.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)652000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)100
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Chip N-CH 1200V 100A 652000mW 3-Pin(3+Tab) TO-247 Tube
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