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IKQ75N120CS6
IKQ75N120CS6
IGBT Chip IKQ75N120CS6
Infineon
IKQ75N120CS6
--
Diodes, Transistors and Thyristors
IGBT Chip
IKQ75N120CS6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
TechnologyTrench Stop
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Supplier PackageTO-247
Maximum Power Dissipation (mW)880000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)150
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Chip N-CH 1200V 150A 880000mW 3-Pin(3+Tab) TO-247 Tube
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