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IKW15N120BH6XKSA1
IKW15N120BH6XKSA1
IGBT Chip IKW15N120BH6XKSA1
Infineon
IKW15N120BH6XKSA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
TechnologyTrench Stop
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Supplier PackageTO-247
Maximum Power Dissipation (mW)200000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)30
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Chip N-CH 1200V 30A 200000mW 3-Pin(3+Tab) TO-247 Tube
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