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IKW20N60H3FKSA1
IKW20N60H3FKSA1
IGBT Chip IKW20N60H3FKSA1
Infineon
IKW20N60H3FKSA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5.03
Package Height20.95
Package Length15.9
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)170000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)40
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Chip N-CH 600V 40A 170000mW 3-Pin(3+Tab) TO-247 Tube
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