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IKW30N65EL5
IKW30N65EL5
IGBT Chip IKW30N65EL5
Infineon
IKW30N65EL5
--
Diodes, Transistors and Thyristors
IGBT Chip
IKW30N65EL5.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
TechnologyTrench Stop 5
PCB changed3
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width5.21(Max)
Package Height21.1(Max)
Package Length16.13(Max)
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)227000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)85
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.05
Description
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
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