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IKW75N60H3
IKW75N60H3
IGBT Chip IKW75N60H3
Infineon
IKW75N60H3
--
Diodes, Transistors and Thyristors
IGBT Chip
IKW75N60H3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveUnknown
Lead ShapeThrough Hole
TechnologyField Stop|Trench
PCB changed3
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)428000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Chip N-CH 600V 80A 428000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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