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IKZ75N65NH5XKSA1
IKZ75N65NH5XKSA1
IGBT Chip IKZ75N65NH5XKSA1
Infineon
IKZ75N65NH5XKSA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveNo
Lead ShapeThrough Hole
TechnologyTrench Stop 5
PCB changed4
Part StatusObsolete
Channel TypeN
ConfigurationSingle Dual Emitter
Package Width5
Package Height21
Package Length15.8
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)395000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)90
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.65
Description
Trans IGBT Chip N-CH 650V 90A 395000mW 4-Pin(4+Tab) TO-247 Tube
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