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IRG4BH20K-LPBF
IRG4BH20K-LPBF
IGBT Chip IRG4BH20K-LPBF
Infineon
IRG4BH20K-LPBF
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Supplier PackageTO-262
Standard Package NameI2PAK
Maximum Power Dissipation (mW)60000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)11
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)4.04
Description
Trans IGBT Chip N-CH 1200V 11A 60000mW 3-Pin(3+Tab) TO-262 Tube
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