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IGBT Chip IRG7CH50K10EF
Infineon
IRG7CH50K10EF
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
ECCN (US)EAR99
PackagingWafer
AutomotiveNo
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Chip N-CH 1200V Wafer
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