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IRG7PG42UDPBF
IRG7PG42UDPBF
IGBT Chip IRG7PG42UDPBF
Infineon
IRG7PG42UDPBF
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
TechnologyTrench
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)320000
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1000
Maximum Continuous Collector Current (A)85
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Chip N-CH 1000V 85A 320000mW Tube
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