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IRG8P50N120KDPBF
IRG8P50N120KDPBF
IGBT Chip IRG8P50N120KDPBF
Infineon
IRG8P50N120KDPBF
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
TechnologyField Stop|Trench
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height20.7(Max)
Package Length15.87(Max)
Supplier PackageTO-247AC
Standard Package NameTO-247
Maximum Power Dissipation (mW)350
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.3
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Chip N-CH 1200V 80A 350mW 3-Pin(3+Tab) TO-247AC Tube
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