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IRGB4065PBF
IRGB4065PBF
IGBT Chip IRGB4065PBF
Infineon
IRGB4065PBF
--
Diodes, Transistors and Thyristors
IGBT Chip
IRGB4065PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Supplier PackageTO-220
Standard Package NameTO-220
Maximum Power Dissipation (mW)178000
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)300
Maximum Continuous Collector Current (A)70
Maximum Gate Emitter Leakage Current (uA)0.1
Description
Trans IGBT Chip N-CH 300V 70A 178000mW 3-Pin(3+Tab) TO-220
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